MOSFET N Ch 600V 7A Pwr MESH IGBT
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ApplicationHIGH CURRENT, HIGH SWITCHING SPEED MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CO...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 25 V | Continuous Drain Current : | 15 A | ||
Resistance Drain-Source RDS (on) : | 0.26 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
Technical/Catalog Information | STP16NM50N |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25° C | 15A |
Rds On (Max) @ Id, Vgs | 260 mOhm @ 7.5A, 10V |
Input Capacitance (Ciss) @ Vds | 1200pF @ 50V |
Power - Max | 125W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 38nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STP16NM50N STP16NM50N 497 7510 5 ND 49775105ND 497-7510-5 |