STP16NF06L

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 16 A
Resistance Drain-Source RDS (on) : 90 mOhms
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 16 V


Application

MOTOR CONTROL, AUDIO AMPLIFIERS
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE ENVIRONMENT




Specifications

Symbol	Parameter	Value		Unit
		STP16NF06L	STP16NF06LFP
VDS	Drain-source Voltage (VGS = 0)	60		V
VDGR	Drain-gate Voltage (RGS = 20 k)	60		V
VGS	Gate- source Voltage	±20		V
ID	Drain Current (continuos) at TC = 25°C	16	11(*)	A
ID	Drain Current (continuos) at TC = 100°C	11	7.5(*)	A
IDM ()	Drain Current (pulsed)	64	44(*)	A
PTOT	Total Dissipation at TC = 25°C	45	25	W
	Derating Factor	0.3	0.17	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope	23		V/ns
EAS (2)	Single Pulse Avalanche Energy	127		mJ
VISO	Insulation Withstand Voltage (DC)	--------	2500	V
Tstg	Storage Temperature	-55 to 175		°C
Tj	Max. Operating Junction Temperature	-55 to 175		°C

Description

The STP16NF06L is designed as one kind of N-channel 60V - 0.07 W - 16A TO-220/TO-220FP STripFET. II power MOSFET that shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

This device STP16NF06L can be used in (1)motor control, audio amplifiers; (2)high current, high speed switching; (3)solenoid and relay drivers; (4)DC-DC & DC-AC converters; (5)automotive environment applications, and has four points of features:(1)typical RDS(on) = 0.07 ; (2)exceptional dv/dt capability; (3)low gate charge at 100 ; (4)low threshold drive.

The absolute maximum ratings of the STP16NF06L can be summarized as:(1)Drain-source Voltage (VGS = 0): 60 V;(2)Drain-gate Voltage (RGS = 20 k): 60 V;(3)Gate- source Voltage: ±16 V;(4)Drain Current (continuous) at Tc = 25°C: 16 A;(5)Drain Current (continuous) at Tc = 100°C: 11 A;(6)Drain Current (pulsed): 64 A;(7)Total Dissipation at Tc = 25°C: 45 W;(8)Derating Factor: 0.3 W/°C;(9)Peak Diode Recovery voltage slope: 23 V/ns;(10)Single Pulse Avalanche Energy: 127 mJ;(11)Storage Temperature: -55 to 175 °C;(12)Operating Junction Temperature: -55 to 175 °C.

The electrical characteristics of this device STP16NF06L can be summarized as:(1)Drain-source Breakdown Voltage: 60 V;(2)Zero Gate Voltage Drain Current (VGS = 0): 1 uA or 10 uA;(3)Gate-body Leakage Current (VDS = 0): ±100 nA;(4)Gate Threshold Voltage: 1 V;(5)Forward Transconductance: 17 S;(6)Input Capacitance: 345 pF. If you want to know more information about the STP16NF06L, please download the datasheet in www.seekic.com or www.chinaicmart.com .

Parameters:

Technical/Catalog Information	STP16NF06L
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	16A
Rds On (Max) @ Id, Vgs	90 mOhm @ 8A, 10V
Input Capacitance (Ciss) @ Vds	345pF @ 25V
Power - Max	45W
Packaging	Tube
Gate Charge (Qg) @ Vgs	10nC @ 5V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP16NF06L STP16NF06L 497 2765 5 ND 49727655ND 497-2765-5