STP16NF06FP

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220FP
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.1 Ohms


Application

MOTOR CONTROL, AUDIO AMPLIFIERS
HIGH CURRENT, HIGH SWITCHING SPEED
SOLENOID AND RELAY DRIVERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE ENVIRONMENT


Specifications

Symbol	Parameter	Value		Unit
		STP10NK80Z	STP10NK80ZF
VDS	Drain-source Voltage (VGS = 0)	60		V
VDGR	Drain- gate Voltage (RGS = 20 k)	60		V
VGS	Gate-Source Voltage	± 20		V
ID	Drain Current (continuous) at Tc = 25	16	11 (*)	A
ID	Drain Current (continuous) at Tc = 100	11	7.5 (*)	A
IDM(`)	Drain Current (pulsed)	64	44 (*)	A
PTOT	Total Dissipation at Tc = 25	45	25	W
	Derating Factor	0.3	0.17	W/
dv/dt (1)	Gate source ESD(HBM-C=100pF, R=1.5KW)	20		V/ns
EAS (2)	Peak Diode Recovery voltage slope	130		mJ
VISO	Insulation Withstand Voltage (DC)		2500	V
Tstg	Storage Temperature	-55 to 175
Tj	Operating Junction Temperature

(•)Pulse width limited by safe operating area (1)ISD0.3A, di/dt100A/µs, V_DD0V(BR)DSS, Tj0 TJMAX
(3) Starting Tj = 25 , ID = 1A, V_DD = 50V (*) Current Limited by package's thermal resistance


Description

This STP16NF06FP Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.