STP16NF06

MOSFET N-Ch 60 Volt 16 Amp

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SeekIC No. : 00148317 Detail

STP16NF06: MOSFET N-Ch 60 Volt 16 Amp

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US $ .29~.51 / Piece | Get Latest Price
Part Number:
STP16NF06
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • 100~250
  • Unit Price
  • $.51
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  • $.29
  • Processing time
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Upload time: 2024/11/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 16 A
Resistance Drain-Source RDS (on) : 100 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 16 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 100 mOhms


Pinout

  Connection Diagram


Description

The STP16NF06 This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™"strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features of the STP16NF06 are:(1)typical rds(on) = 0.08; (2)exceptional dv/dt capability; (3)low gate charge at 100 oc; (4)application oriented characterization.

The absolute maximum ratings of the STP16NF06 can be summarized as:(1)VDS Drain-source Voltage (VGS = 0): 60 V; (2)VDGR Drain-gate Voltage (RGS = 20 k): 60 V; (3)VGS Gate- source Voltage: ± 20 V; (4)ID Drain Current (continuous) at TC = 25°C :16  A; (5)ID Drain Current (continuous) at TC = 100°C :11  A; (6)IDM(?) Drain Current (pulsed) :64  A; (7)Ptot Total Dissipation at TC = 25°C :45  W; (8)Derating Factor : 0.17 W/°C; (9)dv/dt  Peak Diode Recovery voltage slope :20 V/ns; (10)EAS  Single Pulse Avalanche Energy :130 mJ.

If you want to know more information such as the electrical characteristics about STP16NF06 ,please download the datasheet in www.seekdatasheet.com .




Parameters:

Technical/Catalog InformationSTP16NF06
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C16A
Rds On (Max) @ Id, Vgs100 mOhm @ 8A, 10V
Input Capacitance (Ciss) @ Vds 315pF @ 25V
Power - Max45W
PackagingTube
Gate Charge (Qg) @ Vgs13nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP16NF06
STP16NF06
497 2766 5 ND
49727665ND
497-2766-5



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