STP150NF55

MOSFET N Ch 55V 0.005 OHM 120A

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SeekIC No. : 00157153 Detail

STP150NF55: MOSFET N Ch 55V 0.005 OHM 120A

floor Price/Ceiling Price

US $ 1.07~1.34 / Piece | Get Latest Price
Part Number:
STP150NF55
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~635
  • 635~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $1.34
  • $1.18
  • $1.12
  • $1.07
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2024/12/11

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 120 A
Resistance Drain-Source RDS (on) : 0.006 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Continuous Drain Current : 120 A
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 0.006 Ohms


Application

HIGH CURRENT, HIGH SWITCHING SPEED
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE



Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
55
V
VDGR
Drain- gate Voltage (RGS = 20 k)
55
V
VGS
Gate-Source Voltage
± 20
V
ID(**)
Drain Current (continuous) at Tc = 25
120
A
ID

Drain Current (continuous) at Tc = 100
106
A
IDM(`)
Drain Current (pulsed)
480
A
PTOT
Total Dissipation at Tc = 25
300
W
Derating Factor
2.0
W/
dv/dt (1)
Peak Diode Recovery voltage slope
8
V/ns
EAS (2) Single Pulse Avalanche Energy 850 mJ
Tstg
Storage Temperature
-55 to 175
Tj
Max. Operating Junction Temperature
-55 to 175
(•)Pulse width limited by safe operating area (1)ISD120A, di/dt 200A/µs, VDD0V(BR)DSS, TjTJMAX
(3) Starting Tj = 25 , ID = 60A, VDD = 30V (**) Current Limited by Package


Description

This Power MOSFET STP150NF55 is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Parameters:

Technical/Catalog InformationSTP150NF55
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C120A
Rds On (Max) @ Id, Vgs6 mOhm @ 60A, 10V
Input Capacitance (Ciss) @ Vds 4400pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs190nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP150NF55
STP150NF55
497 6117 5 ND
49761175ND
497-6117-5



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