STP14NM65N, US $ 1.72-2.74 , STMicroelectronics, STP14NM65N DataSheet download, circuit diagram from SeekIC.com

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STP14NM65N: MOSFET N-channel 650V

STP14NM65N Data Sheet

US $ 1.72~2.74 / Piece | Get Latest Price

Part Number:: STP14NM65N
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	650 V
Gate-Source Breakdown Voltage :	+/- 25 V	Continuous Drain Current :	12 A
Resistance Drain-Source RDS (on) :	0.38 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 12 A
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.38 Ohms

Parameters:

Technical/Catalog Information	STP14NM65N
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	380 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds	1300pF @ 50V
Power - Max	125W
Packaging	Tube
Gate Charge (Qg) @ Vgs	45nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP14NM65N STP14NM65N 497 7024 5 ND 49770245ND 497-7024-5

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STP14NM65N

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