STP14NF12FP

MOSFET N-Ch, 120V-0.16ohms 14A

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SeekIC No. : 00158981 Detail

STP14NF12FP: MOSFET N-Ch, 120V-0.16ohms 14A

floor Price/Ceiling Price

US $ .35~.39 / Piece | Get Latest Price
Part Number:
STP14NF12FP
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1360
  • 1360~2000
  • 2000~5000
  • Unit Price
  • $.39
  • $.37
  • $.35
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 120 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 8.5 A
Resistance Drain-Source RDS (on) : 0.18 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220FP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220FP
Drain-Source Breakdown Voltage : 120 V
Resistance Drain-Source RDS (on) : 0.18 Ohms
Continuous Drain Current : 8.5 A


Application

HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL



Specifications

Symbol
Parameter
Value
Unit
STP10NK80Z
STP10NK80ZFP
VDS
Drain-source Voltage (VGS = 0)
120
V
VDGR
Drain- gate Voltage (RGS = 20 k)
120
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current (continuous) at Tc = 25
14
8.5
A
ID

Drain Current (continuous) at Tc = 100
9
6
A
IDM(`)
Drain Current (pulsed)
56
34
A
PTOT
Total Dissipation at Tc = 25
60
25
W
Derating Factor
0.4
0.17
W/
dv/dt (1)
Peak Diode Recovery voltage slope
9
V/ns
EAS (2)
Single Pulse Avalanche Energy
60
MJ
VISO
Insulation Withstand Voltage (DC)
2500
V
Tstg
Storage Temperature
-55 to 175

Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area (1)ISD14A, di/dt300A/µs, VDD(BR)DSS, Tj TJMAX
(2) Starting Tj = 25°C, ID = 14A, VDD = 50V


Description

This Power MOSFET series STP14NF12FP realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements




Parameters:

Technical/Catalog InformationSTP14NF12FP
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25° C8.5A
Rds On (Max) @ Id, Vgs180 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds 460pF @ 25V
Power - Max25W
PackagingTube
Gate Charge (Qg) @ Vgs21nC @ 10V
Package / CaseTO-220FP
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP14NF12FP
STP14NF12FP



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