STP14NF10

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 130 mOhms


Application

HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL


Specifications

Symbol	Parameter	Value		Unit
		STP10NK80Z	STP10NK80ZFP
VDS	Drain-source Voltage (VGS = 0)	100		V
VDGR	Drain- gate Voltage (RGS = 20 k)	100		V
VGS	Gate-Source Voltage	± 20		V
ID	Drain Current (continuous) at Tc = 25	15	10	A
ID	Drain Current (continuous) at Tc = 100	1.4	6.3	A
IDM(`)	Drain Current (pulsed)	60	40	A
PTOT	Total Dissipation at Tc = 25	60	25	W
	Derating Factor	0.4	0.17	W/
dv/dt (1)	Peak Diode Recovery voltage slope	9		V/ns
EAS (2)	Single Pulse Avalanche Energy	70		MJ
VISO	Insulation Withstand Voltage (DC)		2000	V
Tstg	Storage Temperature	-55 to 175
Tj	Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area (1)ISD14A, di/dt300A/µs, V_DD(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 oC, ID = 15A, VDD= 50V


Description

This MOSFET series STP14NF10 realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It
is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.