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STP13NM50N: MOSFET N Ch 600V 8A Pwr MESH IGBT

STP13NM50N Data Sheet

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Part Number:: STP13NM50N
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Upload time: 2024/11/4

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	500 V
Gate-Source Breakdown Voltage :	+/- 25 V	Continuous Drain Current :	12 A
Resistance Drain-Source RDS (on) :	0.32 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-220
Continuous Drain Current : 12 A
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.32 Ohms

Parameters:

Technical/Catalog Information	STP13NM50N
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	320 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds	960pF @ 50V
Power - Max	100W
Packaging	Tube
Gate Charge (Qg) @ Vgs	30nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP13NM50N STP13NM50N 497 7505 5 ND 49775055ND 497-7505-5

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STP13NM50N

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