Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: TO-220FP
Drain-Source Breakdown Voltage
: 500 V
Gate-Source Breakdown Voltage
: +/- 30 V
Continuous Drain Current
: 12 A
Resistance Drain-Source RDS (on)
: 0.4 Ohms
Features: ` TYPICAL RDS(on) = 0.32
` HIGH dv/dt AND AVALANCHE CAPABILITIES
` 100% AVALANCHE TESTED
` LOW INPUT CAPACITANCE AND GATE CHARGE
` LOW GATE INPUT RESISTANCE
` TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDSApplication· ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENTSpecifications
| Symbol |
Parameter |
Value |
Unit |
| TO-220/ D2PAK/I2PAK |
TO-220FP |
TO-247 |
| VDS |
Drain-source Voltage (VGS = 0) |
500 |
V |
| VDGR |
Drain-gate Voltage (RGS = 20 k) |
500 |
V |
| VGS |
Gate- source Voltage |
± 30 |
V |
| ID |
Drain Current (continuos) at TC = 25 |
12 |
12(*) |
14 |
A |
| ID |
Drain Current (continuos) at TC = 100 |
7.5 |
7.5(*) |
8.8 |
A |
| IDM() |
Drain Current (pulsed) |
48 |
48(*) |
56 |
A |
| PTOT |
Total Dissipation at TC = 25 |
160 |
35 |
175 |
W |
|
Derating Factor |
1.28 |
0.28 |
1.4 |
W/ |
| dv/dt (1) |
Peak Diode Recovery voltage slope |
20 |
V/ns |
| VISO |
Insulation Withstand Voltage (DC) |
- |
2500 |
-
|
V |
Tj
Tstg |
Operating Junction Temperature
Storage Temperature |
- 65 to 150
- 65 to 150 |
|
() Pulse width limited by safe operating area
(1) ISD12A, di/dt 400 A, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowedDescriptionThe STP12NM50FDFP FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
STP12NM50FDFP Data Sheet
