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STP12NM50FD

MOSFET N-Ch 500 Volt 12 Amp

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SeekIC No. : 00161343 Detail

STP12NM50FD: MOSFET N-Ch 500 Volt 12 Amp

STP12NM50FD Data Sheet

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Part Number:
STP12NM50FD
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/11

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 0.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 0.4 Ohms


Features:

`  TYPICAL RDS(on) = 0.32
`  HIGH dv/dt AND AVALANCHE CAPABILITIES
`  100% AVALANCHE TESTED
`  LOW INPUT CAPACITANCE AND GATE CHARGE
`  LOW GATE INPUT RESISTANCE
`  TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS


Application

· ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT


Specifications

Symbol Parameter
Value
Unit
TO-220/ D2PAK/I2PAK
TO-220FP
 TO-247
VDS Drain-source Voltage (VGS = 0)
500
V
VDGR Drain-gate Voltage (RGS = 20 k)
500
V
VGS Gate- source Voltage
± 30
V
ID Drain Current (continuos) at TC = 25
12
12(*)
14
A
ID Drain Current (continuos) at TC = 100
7.5
7.5(*)
8.8
A
IDM() Drain Current (pulsed)
48
48(*)
56
A
PTOT Total Dissipation at TC = 25
160
35
175
W
Derating Factor
1.28
0.28
1.4
W/
dv/dt (1) Peak Diode Recovery voltage slope
20
V/ns
VISO Insulation Withstand Voltage (DC)
-
2500
-
V
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
- 65 to 150
- 65 to 150

() Pulse width limited by safe operating area
(1) ISD12A, di/dt 400 A, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed


Description

The STP12NM50FD FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.




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