STP12NM50

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 0.35 Ohms


Features:

`  TYPICAL R<sub>DS(on)</sub> = 0.30
`  HIGH dv/dt AND AVALANCHE CAPABILITIES
`  LOW INPUT CAPACITANCE AND GATE CHARGE
`  100% AVALANCHE TESTED
`  LOW GATE INPUT RESISTANCE
`  TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS


Application

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

Specifications

Symbol	Parameter	Value		Unit
		STB12NM50 STB12NM50 STP12NM50	STP12NM50FP
VGS	Gate- source Voltage	± 30		V
ID	Drain Current (continuos) at TC = 25	12	12(*)	A
ID	Drain Current (continuos) at TC = 100	7.5	7.5(*)	A
IDM()	Drain Current (pulsed)	48	48(*)	A
PTOT	Total Dissipation at TC = 25	160	35	W
	Derating Factor	1.28	0.28	W/
VISO	Insulation Withstand Voltage (DC)	-	2500	V
dv/dt (1)	Peak Diode Recovery voltage slope	15		V/ns
Tj Tstg	Operating Junction Temperature Storage Temperature	-65 to 150 -65 to 150

() Pulse width limited by safe operating area
(1) I_SD 12A, di/dt 400A/s, V_DD V_(BR)DSS, T_j T_JMAX.
(*) Limited only by maximum temperature allowed


Description

The STP12NM50 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique STP12NM50 yields overall dynamic performance that is significantly better than that of similar competition's products.

Parameters:

Technical/Catalog Information	STP12NM50
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	350 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds	1000pF @ 25V
Power - Max	160W
Packaging	Tube
Gate Charge (Qg) @ Vgs	39nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP12NM50 STP12NM50 497 2666 5 ND 49726665ND 497-2666-5