STP11NM80

MOSFET N-Ch 800 Volt 11 Amp Power MDmesh

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SeekIC No. : 00150313 Detail

STP11NM80: MOSFET N-Ch 800 Volt 11 Amp Power MDmesh

floor Price/Ceiling Price

US $ 2.14~3.53 / Piece | Get Latest Price
Part Number:
STP11NM80
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $3.53
  • $2.83
  • $2.49
  • $2.14
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 11 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 0.4 Ohms


Features:

 ` TYPICAL RDS(on) = 0.35
 ` LOW GATE INPUT RESISTANCE
 ` LOW INPUT CAPACITANCE AND GATE CHARGE
 ` BEST Rds(on) * Qg IN THE INDUSTRY



Application

The 800 V MDmesh™ family is very suitable for single switch applications in particular for Flyback and Forward converter topologies. 




Specifications

Symbol Parameter
Value
Unit
TO-220/D2PAK
TO-247
TO-220FP
VDS Drain-source Voltage (VGS = 0)
800
V
VDGR Drain-gate Voltage (RGS = 20 k)
800
V
VGS Gate- source Voltage
±30
V
ID Drain Current (continuos) at TC = 25
11
11(*)
A
ID Drain Current (continuos) at TC = 100
4.7
4.7(*)
A
IDM() Drain Current (pulsed)
44
44(*)
A
PTOT Total Dissipation at TC = 25
150
35
W
Derating Factor
1.2
0.28
W/
dv/dt (1) Peak Diode Recovery voltage slope
15
V/ns
Tstg Storage Temperature
65 to 150
Tj Max. Operating Junction Temperature
()Pulse width limited by safe operating area
(1)ISD<11A, di/dt<400A/s, VDD<V(BR)DSS, TJ<TJMAX
(*) Limited only by the Maximum Temperature Allowed



Description

The STP11NM80 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique STP11NM80 yields overall dynamic performance that is significantly better than that of similar competition's products.




Parameters:

Technical/Catalog InformationSTP11NM80
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs400 mOhm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds 1630pF @ 25V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs43.6nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP11NM80
STP11NM80
497 4369 5 ND
49743695ND
497-4369-5



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