STP11NM80

MOSFET N-Ch 800 Volt 11 Amp Power MDmesh

product image

STP11NM80 Picture
SeekIC No. : 00150313 Detail

STP11NM80: MOSFET N-Ch 800 Volt 11 Amp Power MDmesh

floor Price/Ceiling Price

US $ 2.14~3.53 / Piece | Get Latest Price
Part Number:
STP11NM80
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $3.53
  • $2.83
  • $2.49
  • $2.14
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/13

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 11 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 0.4 Ohms


Features:

 ` TYPICAL RDS(on) = 0.35
 ` LOW GATE INPUT RESISTANCE
 ` LOW INPUT CAPACITANCE AND GATE CHARGE
 ` BEST Rds(on) * Qg IN THE INDUSTRY



Application

The 800 V MDmesh™ family is very suitable for single switch applications in particular for Flyback and Forward converter topologies. 




Specifications

Symbol Parameter
Value
Unit
TO-220/D2PAK
TO-247
TO-220FP
VDS Drain-source Voltage (VGS = 0)
800
V
VDGR Drain-gate Voltage (RGS = 20 k)
800
V
VGS Gate- source Voltage
±30
V
ID Drain Current (continuos) at TC = 25
11
11(*)
A
ID Drain Current (continuos) at TC = 100
4.7
4.7(*)
A
IDM() Drain Current (pulsed)
44
44(*)
A
PTOT Total Dissipation at TC = 25
150
35
W
Derating Factor
1.2
0.28
W/
dv/dt (1) Peak Diode Recovery voltage slope
15
V/ns
Tstg Storage Temperature
65 to 150
Tj Max. Operating Junction Temperature
()Pulse width limited by safe operating area
(1)ISD<11A, di/dt<400A/s, VDD<V(BR)DSS, TJ<TJMAX
(*) Limited only by the Maximum Temperature Allowed



Description

The STP11NM80 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique STP11NM80 yields overall dynamic performance that is significantly better than that of similar competition's products.




Parameters:

Technical/Catalog InformationSTP11NM80
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs400 mOhm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds 1630pF @ 25V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs43.6nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP11NM80
STP11NM80
497 4369 5 ND
49743695ND
497-4369-5



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
RF and RFID
Audio Products
Integrated Circuits (ICs)
Transformers
LED Products
Boxes, Enclosures, Racks
View more