MOSFET N-Ch 800 Volt 11 Amp Power MDmesh
STP11NM80: MOSFET N-Ch 800 Volt 11 Amp Power MDmesh
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ApplicationHIGH CURRENT, HIGH SWITCHING SPEED MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CO...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 800 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 11 A | ||
Resistance Drain-Source RDS (on) : | 0.4 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
The 800 V MDmesh™ family is very suitable for single switch applications in particular for Flyback and Forward converter topologies.
Symbol | Parameter |
Value |
Unit | |
TO-220/D2PAK TO-247 |
TO-220FP | |||
VDS | Drain-source Voltage (VGS = 0) |
800 |
V | |
VDGR | Drain-gate Voltage (RGS = 20 k) |
800 |
V | |
VGS | Gate- source Voltage |
±30 |
V | |
ID | Drain Current (continuos) at TC = 25 |
11 |
11(*) |
A |
ID | Drain Current (continuos) at TC = 100 |
4.7 |
4.7(*) |
A |
IDM() | Drain Current (pulsed) |
44 |
44(*) |
A |
PTOT | Total Dissipation at TC = 25 |
150 |
35 |
W |
Derating Factor |
1.2 |
0.28 |
W/ | |
dv/dt (1) | Peak Diode Recovery voltage slope |
15 |
V/ns | |
Tstg | Storage Temperature |
65 to 150 |
||
Tj | Max. Operating Junction Temperature |
The STP11NM80 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique STP11NM80 yields overall dynamic performance that is significantly better than that of similar competition's products.
Technical/Catalog Information | STP11NM80 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25° C | 11A |
Rds On (Max) @ Id, Vgs | 400 mOhm @ 5.5A, 10V |
Input Capacitance (Ciss) @ Vds | 1630pF @ 25V |
Power - Max | 150W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 43.6nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STP11NM80 STP11NM80 497 4369 5 ND 49743695ND 497-4369-5 |