STP11NM60ND

MOSFET N-channel 600V, 10A FDMesh II

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SeekIC No. : 00146816 Detail

STP11NM60ND: MOSFET N-channel 600V, 10A FDMesh II

floor Price/Ceiling Price

US $ 1.37~2.1 / Piece | Get Latest Price
Part Number:
STP11NM60ND
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $2.1
  • $1.7
  • $1.54
  • $1.37
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.45 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 10 A
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.45 Ohms


Parameters:

Technical/Catalog InformationSTP11NM60ND
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs450 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds 850pF @ 50V
Power - Max90W
PackagingTube
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP11NM60ND
STP11NM60ND
497 8442 5 ND
49784425ND
497-8442-5



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