STP11NM60ND, US $ 1.37-2.1 , STMicroelectronics, STP11NM60ND DataSheet download, circuit diagram from SeekIC.com

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STP11NM60ND: MOSFET N-channel 600V, 10A FDMesh II

STP11NM60ND Data Sheet

US $ 1.37~2.1 / Piece | Get Latest Price

Part Number:: STP11NM60ND
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Gate-Source Breakdown Voltage :	+/- 25 V	Continuous Drain Current :	10 A
Resistance Drain-Source RDS (on) :	0.45 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 10 A
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.45 Ohms

Parameters:

Technical/Catalog Information	STP11NM60ND
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	450 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds	850pF @ 50V
Power - Max	90W
Packaging	Tube
Gate Charge (Qg) @ Vgs	30nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP11NM60ND STP11NM60ND 497 8442 5 ND 49784425ND 497-8442-5

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STP11NM60ND

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