MOSFET N-Channel 650V Power MDmesh
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ApplicationHIGH CURRENT, HIGH SWITCHING SPEED MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CO...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 650 V | ||
Gate-Source Breakdown Voltage : | +/- 25 V | Continuous Drain Current : | 9 A | ||
Resistance Drain-Source RDS (on) : | 0.48 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
Technical/Catalog Information | STP10NM65N |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25° C | 9A |
Rds On (Max) @ Id, Vgs | 480 mOhm @ 4.5A, 10V |
Input Capacitance (Ciss) @ Vds | 850pF @ 50V |
Power - Max | 90W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 25nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STP10NM65N STP10NM65N 497 7499 5 ND 49774995ND 497-7499-5 |