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STP10NA40

Features: TYPICAL RDS(on) = 0.46 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREADApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSWITCH MODE POWERSUPPLIES (SMPS)DC-AC CONVERT...

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SeekIC No. : 004508313 Detail

STP10NA40: Features: TYPICAL RDS(on) = 0.46 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLT...

STP10NA40 Data Sheet

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Part Number:
STP10NA40
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 TYPICAL RDS(on) = 0.46 
± 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
LOW INTRINSIC CAPACITANCES
GATE GHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD


Application

HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWERSUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE




Specifications

Symbol Parameter Value Unit
STP10NA40 STP10NA40FI
VDS Drain-source Voltage (VGS = 0) 400 V
VDGR Drain-gate Voltage (RGS = 20 k ) 400 V
VGS Gate- source Voltage ± 30 V
ID(*) Drain Current (continuos) at TC = 25
 10
 6 A
ID(*) Drain Current (continuos) at TC = 100 6.3 3.8 A
IDM() Drain Current (pulsed) 40 40 A
PTOT Total Dissipation at TC = 25 125 45 W
  Derating Factor 1 0.36 W/
VISO Insulation Withstand Voltage (DC) _ 2000 V
Tstg Storage Temperature 65 to 150
Tj Max. Operating Junction Temperature 150



Description

This series of POWER MOSFETS STP10NA40 represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.




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