IGBT Transistors PowerMESH" IGBT
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ApplicationMOTOR CONTROLWELDING EQUIPMENTSSpecifications Symbol Parameter Value Un...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
Collector-Emitter Saturation Voltage : | 2.1 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Gate-Emitter Leakage Current : | 100 nA | Power Dissipation : | 200 W |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-247-3 |
Packaging : | Tube |
Technical/Catalog Information | STGW30NC60WD |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 60A |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
Power - Max | 200W |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STGW30NC60WD STGW30NC60WD 497 5204 5 ND 49752045ND 497-5204-5 |