ApplicationHIGH FREQUENCY MOTOR CONTROLSSMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIESUPSSpecifications Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (contin...
STGW12NB60HD: ApplicationHIGH FREQUENCY MOTOR CONTROLSSMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIESUPSSpecifications Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VG...
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Symbol |
Parameter |
Value |
Unit |
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V |
VGE |
Gate-Emitter Voltage |
± 20 |
V |
IC |
Collector Current (continuous) at Tc = 25 oC |
24 |
A |
IC |
Collector Current (continuous) at Tc = 100 oC |
12 |
A |
ICM() |
Collector Current (pulsed) |
96 |
A |
Ptot |
Total Dissipation at Tc = 25 oC |
120 |
W |
Derating Factor |
0.96 |
W/oC | |
Tstg |
Storage Temperature |
65 to 150 |
oC |
Tj |
Max. Operating Junction Temperature |
150 |
oC |
Using the latest high voltage technology based on a patented strip layout, STGW12NB60HD STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH] IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).