STGW19NC60HD

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247-3


Features:

· Low on-voltage drop (V_CE(sat))
· Low C_RES / C_IES ratio (no cross-conduction susceptibility)
· Very soft ultra fast recovery anti-parallel diode



Application

· High frequency motor controls
· SMPS and PFC in both hard switch and resonant topologies
· Motor drives



Specifications

Symbol	Parameter	Value			Unit
		TO-220 D²PAK	TO-220FP	TO-247
VCES	Collector-emitter voltage (VGE = 0)	600			V
IC(1)	Collector current (continuous) at TC = 25	40	16	42	A
IC(1)	Collector current (continuous) at TC = 100	19	10	21	A
ICL(2)	Turn-off latching current	40			A
ICP(3)	Pulsed collector current	40			A
IF	Diode RMS forward current at TC = 25	20			A
IFSM	Surge not repetitive forward current tp=10 ms sinusoidal	50			A
VGE	TGate-emitter voltage	±20			V
PTOT	Total dissipation at TC = 25	130	32	140	W
Tj	Operating junction temperature	55 to 150

1. Calculated according to the iterative formula:
                             T_JMAX- T_C 
     I_C (T_C )= R_THJ-C* V_CESAT(MAX)T_C (I_C)
2. Vclamp=80%V_CES, TJ= 150 , R_G =1 0 Ω, V_GE = 15 V
3. Pulse width limited by max. temperature allowed




Description

This STGW19NC60HD IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.