STGW12NB60H

IGBT Transistors N-Ch 600 Volt 12 Amp

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STGW12NB60H Picture
SeekIC No. : 00144071 Detail

STGW12NB60H: IGBT Transistors N-Ch 600 Volt 12 Amp

floor Price/Ceiling Price

Part Number:
STGW12NB60H
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 24 A Gate-Emitter Leakage Current : 100 nA
Power Dissipation : 120 W Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Gate-Emitter Leakage Current : 100 nA
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2 V
Package / Case : TO-247-3
Continuous Collector Current at 25 C : 24 A
Power Dissipation : 120 W


Application

 HIGH FREQUENCY MOTOR CONTROLS
 SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES



Specifications

Symbol

Parameter

Value
Unit
VCES
Collector-Emitter Voltage (VGS = 0)
600
V
VGE
Gate-Emitter Voltage
± 20
V
IC
Collector Current (continuous) at Tc = 25 oC
24
A
IC
Collector Current (continuous) at Tc = 100 oC
12
A
ICM(•)
Collector Current (pulsed)
96
A
Ptot
Total Dissipation at Tc = 25 oC
120
W
Derating Factor
0.96
W/oC
Tstg
Storage Temperature
-65 to 150
oC
 
Tj
Max.Operating Junction Temperature

150

 
oC



Description

Using the latest high voltage technology based on a patented strip layout, STGW12NB60H STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH] IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).




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