IGBT Transistors N-Ch 600 Volt 12 Amp
STGW12NB60H: IGBT Transistors N-Ch 600 Volt 12 Amp
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ApplicationHIGH FREQUENCY MOTOR CONTROLSSMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIESUP...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Collector-Emitter Saturation Voltage : | 2 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 24 A | Gate-Emitter Leakage Current : | 100 nA | ||
Power Dissipation : | 120 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-247-3 | Packaging : | Tube |
Symbol |
Parameter |
Value |
Unit | |
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V | |
VGE |
Gate-Emitter Voltage |
± 20 |
V | |
IC |
Collector Current (continuous) at Tc = 25 oC |
24 |
A | |
IC |
Collector Current (continuous) at Tc = 100 oC |
12 |
A | |
ICM(•) |
Collector Current (pulsed) |
96 |
A | |
Ptot |
Total Dissipation at Tc = 25 oC |
120 |
W | |
Derating Factor |
0.96 |
W/oC | ||
Tstg |
Storage Temperature |
-65 to 150 |
oC
| |
Tj |
Max.Operating Junction Temperature |
150 |
oC |
Using the latest high voltage technology based on a patented strip layout, STGW12NB60H STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH] IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).