STGW12NB60H

IGBT Transistors N-Ch 600 Volt 12 Amp

product image

STGW12NB60H Picture
SeekIC No. : 00144071 Detail

STGW12NB60H: IGBT Transistors N-Ch 600 Volt 12 Amp

floor Price/Ceiling Price

Part Number:
STGW12NB60H
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 24 A Gate-Emitter Leakage Current : 100 nA
Power Dissipation : 120 W Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Gate-Emitter Leakage Current : 100 nA
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2 V
Package / Case : TO-247-3
Continuous Collector Current at 25 C : 24 A
Power Dissipation : 120 W


Application

 HIGH FREQUENCY MOTOR CONTROLS
 SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES



Specifications

Symbol

Parameter

Value
Unit
VCES
Collector-Emitter Voltage (VGS = 0)
600
V
VGE
Gate-Emitter Voltage
± 20
V
IC
Collector Current (continuous) at Tc = 25 oC
24
A
IC
Collector Current (continuous) at Tc = 100 oC
12
A
ICM(•)
Collector Current (pulsed)
96
A
Ptot
Total Dissipation at Tc = 25 oC
120
W
Derating Factor
0.96
W/oC
Tstg
Storage Temperature
-65 to 150
oC
 
Tj
Max.Operating Junction Temperature

150

 
oC



Description

Using the latest high voltage technology based on a patented strip layout, STGW12NB60H STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH] IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Undefined Category
Transformers
Tapes, Adhesives
803
Motors, Solenoids, Driver Boards/Modules
View more