STGW30NC60KD

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247-3


Features:

· Low on-voltage drop (V_CE(sat))
· Low C_res / C_ies ratio (no cross conduction susceptibility)
· Short circuit withstand time 10 µs
· IGBT co-packaged with ultra fast free-wheeling diode


Application

· High frequency inverters
· Motor drivers



Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-emitter voltage (VGE = 0)	600	V
IC(1)	Collector current (continuous) at TC = 25	60	A
IC(1)	Collector current (continuous) at TC = 100	28	A
ICL(2)	Turn-off latching current	125	A
ICP(3)	Pulsed collector current	125	A
VGE	Gate-emitter voltage	±20	V
IF	Diode RMS forward current at TC = 25V	30	A
IFSM	Surge non repetitive forward current tp = 10 ms sinusoidal	120	A
PTOT	Total dissipation at TC = 25	200	W
tscw	Short circuit withstand time, VCE = 0.5 V(BR)CES Tj = 125, RG = 10 Ω, VGE = 12 V	10	µs
Tj	Operating junction temperature	55 to 150

1. Calculated according to the iterative formula:


Description

This STGW30NC60KD IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Parameters:

Technical/Catalog Information	STGW30NC60KD
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	60A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 20A
Power - Max	200W
Mounting Type	Through Hole
Package / Case	TO-247-3
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STGW30NC60KD STGW30NC60KD 497 7485 5 ND 49774855ND 497-7485-5