STGW20NB60KD

IGBT Transistors N-Ch 600 Volt 20 Amp

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SeekIC No. : 00143790 Detail

STGW20NB60KD: IGBT Transistors N-Ch 600 Volt 20 Amp

floor Price/Ceiling Price

Part Number:
STGW20NB60KD
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.8 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 50 A Gate-Emitter Leakage Current : +/- 100 nA
Power Dissipation : 170 W Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Continuous Collector Current at 25 C : 50 A
Maximum Gate Emitter Voltage : +/- 20 V
Power Dissipation : 170 W
Package / Case : TO-247-3
Gate-Emitter Leakage Current : +/- 100 nA
Collector-Emitter Saturation Voltage : 2.8 V


Features:

OFF LOSSES INCLUDE TAIL CURRENT
HIGH CURRENT CAPABILITY
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
LOW ON-VOLTAGE DROP (Vcesat)
LOW ON-LOSSES
LOW GATE CHARGE
VERY HIGH FREQUENCY OPERATION
SHORT CIRCUIT RATED
LATCH CURRENT FREE OPERATION



Application

HIGH FREQUENCY MOTOR CONTROLS
U.P.S
WELDING EQUIPMENTS



Specifications

Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS = 0)
600
V
VECR
Emitter-Collector Voltage
20
V
VGE
Gate-Emitter Voltage
± 20
V
IC
Collector Current (continuous) at 25°C (#)
50
A
IC
Collector Current (continuous) at 100°C (#)
25
A
ICM(•)
Collector Current (pulsed)
100
A

Tsc

Short Circuit Withstand

10

ms

Ptot
Total Dissipation at Tc = 25 oC
170
W
Derating Factor
1.2
W/oC
Tstg
Storage Temperature
55 to 150
oC
Tj
Operating Junction Temperature
oC



Description

Using the latest high voltage technology based on a patented strip layout, STGW20NB60KD STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency motor control applications with short circuit withstand capability.




Parameters:

Technical/Catalog InformationSTGW20NB60KD
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)50A
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 20A
Power - Max170W
Mounting TypeThrough Hole
Package / CaseTO-247-3
PackagingTube
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names STGW20NB60KD
STGW20NB60KD
497 2654 5 ND
49726545ND
497-2654-5



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