IGBT Transistors N-Ch 600 Volt 20 Amp
STGW20NB60KD: IGBT Transistors N-Ch 600 Volt 20 Amp
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ApplicationHIGH FREQUENCY MOTOR CONTROLSSMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIESUP...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Collector-Emitter Saturation Voltage : | 2.8 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 50 A | Gate-Emitter Leakage Current : | +/- 100 nA | ||
Power Dissipation : | 170 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-247-3 | Packaging : | Tube |
Symbol |
Parameter |
Value |
Unit |
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V |
VECR |
Emitter-Collector Voltage |
20 |
V |
VGE |
Gate-Emitter Voltage |
± 20 |
V |
IC |
Collector Current (continuous) at 25°C (#) |
50 |
A |
IC |
Collector Current (continuous) at 100°C (#) |
25 |
A |
ICM(•) |
Collector Current (pulsed) |
100 |
A |
Tsc |
Short Circuit Withstand |
10 |
ms |
Ptot |
Total Dissipation at Tc = 25 oC |
170 |
W |
Derating Factor |
1.2 |
W/oC | |
Tstg |
Storage Temperature |
55 to 150 |
oC |
Tj |
Operating Junction Temperature |
oC |
Using the latest high voltage technology based on a patented strip layout, STGW20NB60KD STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency motor control applications with short circuit withstand capability.
Technical/Catalog Information | STGW20NB60KD |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 50A |
Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 20A |
Power - Max | 170W |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Packaging | Tube |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | STGW20NB60KD STGW20NB60KD 497 2654 5 ND 49726545ND 497-2654-5 |