IGBT Transistors 10 A-600 V fast IGBT
STGF10NC60SD: IGBT Transistors 10 A-600 V fast IGBT
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Collector- Emitter Voltage VCEO Max : | 600 V | Collector-Emitter Saturation Voltage : | 1.45 V | ||
Maximum Gate Emitter Voltage : | 20 V | Continuous Collector Current at 25 C : | 10 A | ||
Gate-Emitter Leakage Current : | 100 nA | Power Dissipation : | 25 W | ||
Package / Case : | TO-220FP | Packaging : | Tube |