IGBT Transistors PowerMESH" IGBT
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
Collector-Emitter Saturation Voltage : | 2 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Gate-Emitter Leakage Current : | 100 nA | Power Dissipation : | 25 W |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-220FP-3 |
Packaging : | Tube |
Symbol | Parameter | Value | Unit | |
STGB10NC60KD STGP10NC60KD |
STGF10NC60KD | |||
VCES | Collector-Emitter Voltage (VGS = 0) | 600 | V | |
VECR | Emitter-Collector Voltage | 200 | V | |
VGE | Gate-Emitter Voltage | ±20 | V | |
IC | Collector Current (continuous) at TC = 25°C (#) | 20 | 9 | A |
IC | Collector Current (continuous) at TC = 100°C (#) | 10 | 6 | A |
ICM (`) | Collector Current (pulsed) | 40 | A | |
IF | Diode RMS Forward Current at TC = 25°C | 10 | A | |
PTOT | Total Dissipation at TC = 25°C | 60 | 25 | W |
Derating Factor | 0.48 | 0.20 | W/°C | |
VISO | Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C) | - | 2500 | V |
Tstg | Storage Temperature | 55 to 150 | °C | |
Tj | Operating Junction Temperature |
Using the latest high voltage technology based on a patented strip layout, STGF10NC60KD STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency motor control applications with short circuit withstand capability.
Technical/Catalog Information | STGF10NC60KD |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 9A |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 5A |
Power - Max | 25W |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack (Straight Leads) |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STGF10NC60KD STGF10NC60KD 497 5114 5 ND 49751145ND 497-5114-5 |