STGF10NB60SD

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 20 A
Collector-Emitter Saturation Voltage : 1.8 V
Power Dissipation : 25 W
Gate-Emitter Leakage Current : +/- 100 nA
Package / Case : TO-220FP-3


Application

 LIGHT DIMMER
 STATIC RELAYS
 MOTOR CONTROL


Specifications

Symbol	Parameter	Value		Unit
VCES	Collector-Emitter Voltage (VGS = 0)	600		V
VECR	Emitter-Collector Voltage	20		V
VGE	Gate-Emitter Voltage	± 20		V
IC	Collector Current (continuous) at Tc = 25 oC	20		A
IC	Collector Current (continuous) at Tc = 100 oC	10		A
ICM(•)	Collector Current (pulsed)	80		A
Ptot	Total Dissipation at Tc = 25 oC	25		W
	Derating Factor	0.2		W/oC
VISO	Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C)	2500		V
Tstg	Storage Temperature	65 to 175		oC
Tj	Max.Operating Junction Temperature	150		oC

Description

Using the latest high voltage technology based on a patented strip layout, STGF10NB60SD STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz).