MOSFET N-ch 600 V 4.6 Amp Power MDmesh
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ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLIF...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 25 V | Continuous Drain Current : | 4.6 A | ||
Resistance Drain-Source RDS (on) : | 0.92 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Reel |
Technical/Catalog Information | STB6NM60N |
Vendor | STMicroelectronics (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25° C | 4.6A |
Rds On (Max) @ Id, Vgs | 920 mOhm @ 2.3A, 10V |
Input Capacitance (Ciss) @ Vds | 420pF @ 50V |
Power - Max | 45W |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 13nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STB6NM60N STB6NM60N 497 8770 6 ND 49787706ND 497-8770-6 |