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STB6NM60N

MOSFET N-ch 600 V 4.6 Amp Power MDmesh

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SeekIC No. : 00161044 Detail

STB6NM60N: MOSFET N-ch 600 V 4.6 Amp Power MDmesh

STB6NM60N Data Sheet

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Part Number:
STB6NM60N
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 4.6 A
Resistance Drain-Source RDS (on) : 0.92 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : 4.6 A
Resistance Drain-Source RDS (on) : 0.92 Ohms


Parameters:

Technical/Catalog InformationSTB6NM60N
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C4.6A
Rds On (Max) @ Id, Vgs920 mOhm @ 2.3A, 10V
Input Capacitance (Ciss) @ Vds 420pF @ 50V
Power - Max45W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs13nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB6NM60N
STB6NM60N
497 8770 6 ND
49787706ND
497-8770-6



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