MOSFET N-Ch 60 Volt 60 Amp
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Features: `TYPICAL RDS(on) = 0.0085 `AVALANCHE RUGGED TECHNOLOGY`100% AVALANCHE TESTED`REPETITIVE ...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 15 V | Continuous Drain Current : | 60 A | ||
Resistance Drain-Source RDS (on) : | 0.014 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Reel |
Technical/Catalog Information | STB60NF06LT4 |
Vendor | STMicroelectronics (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 60A |
Rds On (Max) @ Id, Vgs | 14 mOhm @ 30A, 10V |
Input Capacitance (Ciss) @ Vds | 2000pF @ 25V |
Power - Max | 110W |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 66nC @ 4.5V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STB60NF06LT4 STB60NF06LT4 497 6554 6 ND 49765546ND 497-6554-6 |