STB60N55F3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 8.5 mOhms


Features:

Type	VDSS	RDS(on)	ID	Pw
STB60N55F3 STD60N55F3 STF60N55F3 STP60N55F3 STU60N55F3	55V 55V 55V 55V 55V	<8.5m <8.5m <8.5m <8.5m <8.5m	80A 80A 42A 80A 80A	110W 110W 30W 110W 110W

` Standard threshold drive
` 100% avalanche tested


Application

· Switching application


Description

This n-channel enhancement mode Power MOSFET STB60N55F3 is the latest refinement of STMicroelectronics' unique "Single Feature Size™" strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge.

Parameters:

Technical/Catalog Information	STB60N55F3
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	8.5 mOhm @ 32A, 10V
Input Capacitance (Ciss) @ Vds	2200pF @ 25V
Power - Max	110W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	45nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STB60N55F3 STB60N55F3 497 5954 6 ND 49759546ND 497-5954-6