MOSFET N-Ch 60 Volt 55 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 16 V | Continuous Drain Current : | 55 A | ||
Resistance Drain-Source RDS (on) : | 0.014 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Reel |
Technical/Catalog Information | STB55NF06LT4 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 55A |
Rds On (Max) @ Id, Vgs | 18 mOhm @ 27.5A, 10V |
Input Capacitance (Ciss) @ Vds | 1700pF @ 25V |
Power - Max | 95W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 37nC @ 4.5V |
Package / Case | D²Pak, TO-263 (2 leads + tab) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STB55NF06LT4 STB55NF06LT4 497 7462 2 ND 49774622ND 497-7462-2 |