Features: TYPICAL RDS(on) = 0.021 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 APPLICATIONORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICEApplication HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS ...
STB50NE10: Features: TYPICAL RDS(on) = 0.021 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 APPLICATIONORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICEApplic...
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Symbol |
Parameter |
Value |
Unit |
VDS |
Drain-source Voltage (VGS = 0) |
80 |
V |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
80 |
V |
VGS |
Gate-source Voltage |
±20 |
V |
ID |
Drain Current (continuous) at Tc = 25 |
50 |
A |
ID |
Drain Current (continuous) at Tc = 100 |
35 |
A |
IDM(•) |
Drain Current (pulsed) |
200 |
A |
Ptot |
Total Dissipation at Tc = 25 |
150 |
W |
Derating Factor |
1 |
W/ | |
dv/dt (1) |
Peak Diode Recovery voltage slope |
6 |
V/ns |
Tstg |
Storage Temperature |
-65 to 175 |
°C |
Tj |
Max. Operating Junction Temperature |
175 |
°C |
This STB50NE10 Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.