STB50NE10L

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Package / Case : D2PAK
Packaging : Tube
Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.24 Ohms


Features:

  TYPICAL RDS(on) = 0.020
  EXCEPTIONAL dv/dt CAPABILITY
  100% AVALANCHE TESTED
  LOW GATE CHARGE AT 100
 APPLICATION ORIENTED CHARACTERIZATION
 FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE


Application

HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE ENVIRONMENT


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	80	V
VDGR	Drain- gate Voltage (RGS = 20 k)	80	V
VGS	Gate-source Voltage	±20	V
ID	Drain Current (continuous) at Tc = 25	50	A
ID	Drain Current (continuous) at Tc = 100	35	A
IDM(•)	Drain Current (pulsed)	200	A
Ptot	Total Dissipation at Tc = 25	150	W
	Derating Factor	1	W/
dv/dt (1)	Peak Diode Recovery voltage slope	6	V/ns
Tstg	Storage Temperature	-65 to 175	°C
Tj	Max. Operating Junction Temperature	175	°C

(l) Pulse width limited by safe operating area (1) I_SD 50 A,di/dt 300 A/ms, V_DD V_(BR)DSS, T_j T_JMAX


Description

This STB50NE10L Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeÔ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.