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STB50NE08

Features: TYPICAL RDS(on) = 0.020 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 APPLICATION ORIENTED CHARACTERIZATIONFOR THROUGH-HOLE VERSION CONTACT SALES OFFICEApplicationHIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLIFIERSDC-...

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SeekIC No. : 004507180 Detail

STB50NE08: Features: TYPICAL RDS(on) = 0.020 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 APPLICATION ORIENTED CHARACTERIZATIONFOR THROUGH-HOLE VERSION CONTACT SALES OFFICEApplic...

STB50NE08 Data Sheet

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Part Number:
STB50NE08
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

TYPICAL RDS(on) = 0.020
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE AT 100
APPLICATION ORIENTED CHARACTERIZATION
FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
  SOLENOID AND RELAY DRIVERS
 MOTOR CONTROL, AUDIO AMPLIFIERS
 DC-DC & DC-AC CONVERTERS
 AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)


Specifications

Symbol
Parameter
Value
Unit
VDS
 Drain-source Voltage (VGS = 0)
80
V
VDGR
 Drain- gate Voltage (RGS = 20 k)
80
V
VGS
 Gate-source Voltage
±20
V
ID
 Drain Current (continuous) at Tc = 25
50
A
ID
 Drain Current (continuous) at Tc = 100
35
A
IDM(•)
 Drain Current (pulsed)
200
A
Ptot
 Total Dissipation at Tc = 25
150
W
 Derating Factor
1
W/
dv/dt (1)
 Peak Diode Recovery voltage slope
6
V/ns
Tstg
 Storage Temperature
-65 to 175
°C
Tj
 Max. Operating Junction Temperature
175
°C
(l) Pulse width limited by safe operating area   (1) ISD 50 A,di/dt 300 A/ms, VDD V(BR)DSS, Tj TJMAX


Description

This STB50NE08 Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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