Position: Home  > All Categories> Integrated Circuits (ICs) > STB55NF06L

STB55NF06L

ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGMOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)Specifications Symbol Parameter Value Unit STP55NF06LSTB55NF06L/-1 STP55NF06LFP VDS D...

product image

STB55NF06L Picture
See larger image
SeekIC No. : 004507188 Detail

STB55NF06L: ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGMOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)Specifications Sym...

STB55NF06L Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STB55NF06L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Application

HIGH CURRENT, HIGH SPEED SWITCHING
 MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)


Specifications

Symbol
Parameter
Value
Unit
 
STP55NF06L
STB55NF06L/-1
STP55NF06LFP
VDS
Drain-source Voltage (VGS = 0)
60
VDGR
Drain-gate Voltage (RGS = 20 k)
60
V
VGS
Gate- source Voltage
± 16
V
ID
Drain Current (continuous) at TC = 25°C
55
30
V
ID
Drain Current (continuous) at TC = 100°C
39
21
A
IDM ()
Drain Current (pulsed)
220
120
A
PTOT
Total Dissipation at TC = 25°C
95
30
A
 
Derating Factor
0.63
0.2
W
dv/dt (2)
Peak Diode Recovery voltage slope
20
W/°C
EAS (1)
Single Pulse Avalanche Energy
300
V/ns
VISO
Insulation Withstand Voltage (DC)
2500
mJ
Tstg
Storage Temperature
55 to 175
V
Tj
Max. Operating Junction Temperature
55 to 175
°C



Description

This STB55NF06L Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Tools
TCP202
G084SN05 V.3
Prototyping Products
AVT4168
DE1
Undefined Category
VI-B63-IU
X27 589
Audio Products
HUC1002
WM-64CT
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Cables, Wires
821-0814-a
415-0100-150
View more