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STB50NE10T4: MOSFET N-Ch 100 Volt 50 Amp

STB50NE10T4 Data Sheet

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Part Number:: STB50NE10T4
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Upload time: 2024/11/4

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Recent History
What is this?

STB50N25M5 evaluate
US $1.43 - 1.88 / Piece

MOSFET N-Channel 150V to 400V
STB50NE08 evaluate
Features: TYPICAL RDS(on) = 0.020 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHA...
STB50NE10 evaluate
Features: TYPICAL RDS(on) = 0.021 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CH...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	50 A
Resistance Drain-Source RDS (on) :	0.021 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	D2PAK	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Package / Case : D2PAK
Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.021 Ohms

Parameters:

Technical/Catalog Information	STB50NE10T4
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	27 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	6000pF @ 25V
Power - Max	180W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	166nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STB50NE10T4 STB50NE10T4

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STB50NE10T4

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