STB50NE10T4

MOSFET N-Ch 100 Volt 50 Amp

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SeekIC No. : 00160468 Detail

STB50NE10T4: MOSFET N-Ch 100 Volt 50 Amp

floor Price/Ceiling Price

Part Number:
STB50NE10T4
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.021 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Package / Case : D2PAK
Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.021 Ohms


Parameters:

Technical/Catalog InformationSTB50NE10T4
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs27 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 6000pF @ 25V
Power - Max180W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs166nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB50NE10T4
STB50NE10T4



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