Features: TYPICAL RDS(on) = 0.028WEXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTEDAPPLICATION ORIENTED CHARACTERIZATIONADD SUFFIX T4 FOR ORDERING IN TAPE & REELApplicationHIGH-EFFICIENCY DC-DC CONVERTERSUPS AND MOTOR CONTROLAUTOMOTIVESpecifications Symbol Parameter Value Un...
STB40NF10L: Features: TYPICAL RDS(on) = 0.028WEXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTEDAPPLICATION ORIENTED CHARACTERIZATIONADD SUFFIX T4 FOR ORDERING IN TAPE & REELApplicationHIGH-EFFICIENCY DC-...
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ApplicationHIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLI...
ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLIF...
Symbol |
Parameter |
Value |
Unit |
VDS |
Drain-source Voltage (VGS = 0) |
100 |
V |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
100 |
V |
VGS |
Gate-source Voltage |
±15 |
V |
ID |
Drain Current (continuous) at Tc = 25 |
40 |
A |
ID |
Drain Current (continuous) at Tc = 100 |
25 |
A |
IDM(•) |
Drain Current (pulsed) |
160 |
A |
PTOT |
Total Dissipation at Tc = 25 |
150 |
W |
Derating Factor |
1 |
W/ | |
EAS(1) |
Single Pulse Avalanche Energy |
430 |
mJ |
Tstg |
Storage Temperature |
-65 to 175 |
°C |
Tj |
Max. Operating Junction Temperature |
175 |
°C |
This PSTB40NF10L ower Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.