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STB40N20

MOSFET N-Ch 200 V 0.38 Ohm 40 A STripFET

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SeekIC No. : 00161043 Detail

STB40N20: MOSFET N-Ch 200 V 0.38 Ohm 40 A STripFET

STB40N20 Data Sheet

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Part Number:
STB40N20
Mfg:
STMicroelectronics
Supply Ability:
5000

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 40 A
Resistance Drain-Source RDS (on) : 0.038 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 40 A
Resistance Drain-Source RDS (on) : 0.038 Ohms


Features:

TYPICAL RDS(on) = 0.038 Ω
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING REPEATIBILITY
EXCELLENT FIGURE OF MERIT (RDS*Qg)
100% AVALANCHE TESTED


Application

HIGH CURRENT, HIGH SPEED SWITCHING
UPS


Specifications

Symbol Parameter Value Unit
VDS

Drain-source Voltage (VGS = 0)

 200 V
VDGR

Drain- gate Voltage (RGS = 20 k)

 200 V
VGS

Gate-source Voltage

 ±20 V
ID

Drain Current (continuous) at Tc = 25

40 A
ID

Drain Current (continuous) at Tc = 100

25 A
IDM(+)

Drain Current (pulsed)

 160 A
PTOT

Total Dissipation at Tc = 25

160 W

Derating Factor

 1.28 W/

 dv/dt(1)

 Peak Diode Recovery voltage slope

12

 V/ns

Tj
Tstg

Operating Junction Temperature
Storage Temperature

 -55 to 150



Description

This STB40N20 MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.




Parameters:

Technical/Catalog InformationSTB40N20
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C40A
Rds On (Max) @ Id, Vgs45 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 2500pF @ 25V
Power - Max160W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs75nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB40N20
STB40N20
497 4765 1 ND
49747651ND
497-4765-1



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