Position: Home  > All Categories> Integrated Circuits (ICs) > STB40N20

STB40N20

MOSFET N-Ch 200 V 0.38 Ohm 40 A STripFET

product image

STB40N20 Picture
See larger image
SeekIC No. : 00161043 Detail

STB40N20: MOSFET N-Ch 200 V 0.38 Ohm 40 A STripFET

STB40N20 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STB40N20
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 40 A
Resistance Drain-Source RDS (on) : 0.038 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 40 A
Resistance Drain-Source RDS (on) : 0.038 Ohms


Features:

TYPICAL RDS(on) = 0.038 Ω
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING REPEATIBILITY
EXCELLENT FIGURE OF MERIT (RDS*Qg)
100% AVALANCHE TESTED


Application

HIGH CURRENT, HIGH SPEED SWITCHING
UPS


Specifications

Symbol Parameter Value Unit
VDS

Drain-source Voltage (VGS = 0)

 200 V
VDGR

Drain- gate Voltage (RGS = 20 k)

 200 V
VGS

Gate-source Voltage

 ±20 V
ID

Drain Current (continuous) at Tc = 25

40 A
ID

Drain Current (continuous) at Tc = 100

25 A
IDM(+)

Drain Current (pulsed)

 160 A
PTOT

Total Dissipation at Tc = 25

160 W

Derating Factor

 1.28 W/

 dv/dt(1)

 Peak Diode Recovery voltage slope

12

 V/ns

Tj
Tstg

Operating Junction Temperature
Storage Temperature

 -55 to 150



Description

This STB40N20 MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.




Parameters:

Technical/Catalog InformationSTB40N20
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C40A
Rds On (Max) @ Id, Vgs45 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 2500pF @ 25V
Power - Max160W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs75nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB40N20
STB40N20
497 4765 1 ND
49747651ND
497-4765-1



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Tools
TCP202
G084SN05 V.3
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Kits
IT243
UVSC-110-4E1
Discrete Semiconductor Products
T508N12TOF
MUR20040
Test Equipment
TOP853
TOP2005
Switches
US32DMRJ
HBGQ22P-11ET
View more