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STB40NF10-1

Features: `TYPICAL R DS(on) = 0.024W`EXCEPTIONAL dv/dt CAPABILITY` 100% AVALANCHE TESTED` APPLICATION ORIENTED CHARACTERIZATION` ADD SUFFIX T4 FOR ORDERING IN TAPE & REELApplication· HIGH-EFFICIENCY DC-DC CONVERTERS· UPS AND MOTOR CONTROLSpecifications Symbol Parameter Value ...

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SeekIC No. : 004507162 Detail

STB40NF10-1: Features: `TYPICAL R DS(on) = 0.024W`EXCEPTIONAL dv/dt CAPABILITY` 100% AVALANCHE TESTED` APPLICATION ORIENTED CHARACTERIZATION` ADD SUFFIX T4 FOR ORDERING IN TAPE & REELApplication· HIGH-EFFI...

STB40NF10-1 Data Sheet

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Part Number:
STB40NF10-1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/27

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Product Details

Description



Features:

`TYPICAL R DS(on) = 0.024W
`EXCEPTIONAL dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` APPLICATION ORIENTED CHARACTERIZATION
` ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL


Application

· HIGH-EFFICIENCY DC-DC CONVERTERS
· UPS AND MOTOR CONTROL


Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
100
V
VDGR
Drain-gate Voltage (RGS = 20 k )
100
V
VGS
Gate- source Voltage
±20
V
ID(*)
Drain Current (continuos) at TC = 25°C
50
A
ID
Drain Current (continuos) at TC = 100°C
35
A
I DM ()
Drain Current (pulsed)
200
A
PTOT
Total Dissipation at TC = 25°C
150
W
Derating Factor
1
W/°C
dv/d
Peak Diode Recovery voltage slope
20
V/ns
EAS (2)
Single Pulse Avalanche Energy
150
mJ
Tstg
Storage Temperature
55 to 175
Tj
Max. Operating Junction Temperature
°C
(•)Pulse width limited by safe operating area
(1)ISD 40 A, di/dt 600A/s, VDD V (BR)DSS, Tj TJMAX
(2) Starting Tj = 25°C, ID = 40A, VDD = 50V
(*) Limited by Package


Description

This STB40NF10-1 Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.




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