Position: Home  > All Categories> Integrated Circuits (ICs) > STB40NF10-1

STB40NF10-1

Features: `TYPICAL R DS(on) = 0.024W`EXCEPTIONAL dv/dt CAPABILITY` 100% AVALANCHE TESTED` APPLICATION ORIENTED CHARACTERIZATION` ADD SUFFIX T4 FOR ORDERING IN TAPE & REELApplication· HIGH-EFFICIENCY DC-DC CONVERTERS· UPS AND MOTOR CONTROLSpecifications Symbol Parameter Value ...

product image

STB40NF10-1 Picture
See larger image
SeekIC No. : 004507162 Detail

STB40NF10-1: Features: `TYPICAL R DS(on) = 0.024W`EXCEPTIONAL dv/dt CAPABILITY` 100% AVALANCHE TESTED` APPLICATION ORIENTED CHARACTERIZATION` ADD SUFFIX T4 FOR ORDERING IN TAPE & REELApplication· HIGH-EFFI...

STB40NF10-1 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STB40NF10-1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`TYPICAL R DS(on) = 0.024W
`EXCEPTIONAL dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` APPLICATION ORIENTED CHARACTERIZATION
` ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL


Application

· HIGH-EFFICIENCY DC-DC CONVERTERS
· UPS AND MOTOR CONTROL


Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
100
V
VDGR
Drain-gate Voltage (RGS = 20 k )
100
V
VGS
Gate- source Voltage
±20
V
ID(*)
Drain Current (continuos) at TC = 25°C
50
A
ID
Drain Current (continuos) at TC = 100°C
35
A
I DM ()
Drain Current (pulsed)
200
A
PTOT
Total Dissipation at TC = 25°C
150
W
Derating Factor
1
W/°C
dv/d
Peak Diode Recovery voltage slope
20
V/ns
EAS (2)
Single Pulse Avalanche Energy
150
mJ
Tstg
Storage Temperature
55 to 175
Tj
Max. Operating Junction Temperature
°C
(•)Pulse width limited by safe operating area
(1)ISD 40 A, di/dt 600A/s, VDD V (BR)DSS, Tj TJMAX
(2) Starting Tj = 25°C, ID = 40A, VDD = 50V
(*) Limited by Package


Description

This STB40NF10-1 Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Kits
IT243
UVSC-110-4E1
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
RF and RFID
X3C26P1-30S
1P620S
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Crystals and Oscillators
WT325BI0030.000000
2SB49
View more