ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLIFIERSDC-DC & DC-AC CONVERTERSSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain-gate Voltage (RGS = 20 k) 30 V ...
STB40NF03L: ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLIFIERSDC-DC & DC-AC CONVERTERSSpecifications Symbol Parameter Value Unit VDS ...
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ApplicationHIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLI...
Symbol |
Parameter |
Value |
Unit |
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
VDGR |
Drain-gate Voltage (RGS = 20 k) |
30 |
V |
VGS |
Gate- source Voltage |
± 20 |
V |
ID(* *) |
Drain Current (continuous) at TC = 25°C |
40 |
A |
ID |
Drain Current (continuous) at TC = 100°C |
28 |
A |
IDM(•) |
Drain Current (pulsed) |
160 |
A |
Ptot |
Total Dissipation at TC = 25°C |
70 |
W |
Derating Factor |
0.46 |
W/°C | |
EAS(1) |
Single Pulse Avalanche Energy |
250 |
m/J |
Tstg |
Storage Temperature |
-65 to 175 |
°C |
Tj |
Operating Junction Temperature |
175 |
°C |
This STB40NF03L Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing
reproducibility.