STB40NF10 Selling Leads, Price trend, STB40NF10 DataSheet download, circuit diagram from SeekIC.com

Features: TYPICAL RDS(on) = 0.030 W EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATIONORIENTED CHARACTERIZATIONSURFACE-MOUNTING D2PAK (TO-263) POWERPACKAGE IN TAPE & REEL (SUFFIX T4 )Application HIGH-EFFICIENCYDC-DC CONVERTERSUPS AND MOTOR CONTROLSpecifications Symbol Pa...

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SeekIC No. : 004507161 Detail

STB40NF10: Features: TYPICAL RDS(on) = 0.030 W EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATIONORIENTED CHARACTERIZATIONSURFACE-MOUNTING D2PAK (TO-263) POWERPACKAGE IN TAPE & REEL (SUFFIX T4...

STB40NF10 Data Sheet

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Part Number:: STB40NF10
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/11/21

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Recent History
What is this?

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MOSFET N-Ch 200 V 0.38 Ohm 40 A STripFET
STB40NE03L-20 evaluate
ApplicationHIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLI...
STB40NF03L evaluate
ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLIF...

Product Details

Description

Features:

TYPICAL RDS(on) = 0.030 W
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATIONORIENTED
   CHARACTERIZATION
SURFACE-MOUNTING D2PAK (TO-263)
    POWERPACKAGE IN TAPE & REEL
   (SUFFIX "T4")

Application

HIGH-EFFICIENCYDC-DC CONVERTERS
UPS AND MOTOR CONTROL

Specifications

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	100	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	100	V
V_GS	Gate-source Voltage	± 20	V
I_D	Drain Current (continuous) at T_c = 25	40	A
I_D	Drain Current (continuous) at T_c = 100	25	A
I_DM(•)	Drain Current (pulsed)	160	A
P_tot	Total Dissipation at T_c= 25	140	W
	Derating Factor	0.93	W/
E_AS(1)	Single Pulse Avalanche Energy	135	mJ
T_stg	Storage Temperature	-65 to 175	°C
T_j	Max. Operating Junction Temperature	175	°C

(•) Pulse width limited by safe operating area ( 1) starting T_j= 25oC, I_D =40A , V_DD= 50V

Description

This STB40NF10 MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

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STB40NF10

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