Features: TYPICAL RDS(on) = 0.030 W EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATIONORIENTED CHARACTERIZATIONSURFACE-MOUNTING D2PAK (TO-263) POWERPACKAGE IN TAPE & REEL (SUFFIX T4 )Application HIGH-EFFICIENCYDC-DC CONVERTERSUPS AND MOTOR CONTROLSpecifications Symbol Pa...
STB40NF10: Features: TYPICAL RDS(on) = 0.030 W EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATIONORIENTED CHARACTERIZATIONSURFACE-MOUNTING D2PAK (TO-263) POWERPACKAGE IN TAPE & REEL (SUFFIX T4...
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ApplicationHIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLI...
ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLIF...
Symbol |
Parameter |
Value |
Unit |
VDS |
Drain-source Voltage (VGS = 0) |
100 |
V |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
100 |
V |
VGS |
Gate-source Voltage |
± 20 |
V |
ID |
Drain Current (continuous) at Tc = 25 |
40 |
A |
ID |
Drain Current (continuous) at Tc = 100 |
25 |
A |
IDM(•) |
Drain Current (pulsed) |
160 |
A |
Ptot |
Total Dissipation at Tc = 25 |
140 |
W |
Derating Factor |
0.93 |
W/ | |
EAS(1) |
Single Pulse Avalanche Energy |
135 |
mJ |
Tstg |
Storage Temperature |
-65 to 175 |
°C |
Tj |
Max. Operating Junction Temperature |
175 |
°C |
This STB40NF10 MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.