SSP4N90

The SSP4N90 has 7 features.The first one is low RDS(ON).The second one is improved inductive ruggedness.The third one is fast switching times.The fourth one is rugged polysilicon gate cell structure.The fifth one is lower input capacitance.The sixth one is extended safe operating area.The seventh one is improved high temperature reliability.

The SSP4N90 has some absolute maximum ratings.When characteristic is drain-source voltage,the symbol is VDSS,the rating is 900,the unit is Vdc.When characteristic is drain-gate voltage(RGS=1.0M),the symbol is VDGR,the rating is 900,the unit is Vdc.When characteristic is gate-source voltage,the symbol is VGS,the rating is ±30,the unit is Vdc.When characteristic is continuous drain current Tc=25,the symbol is ID,the rating is 4.0,the unit is Adc.When characteristic is continuous drain current Tc=100,the symbol is ID,the rating is 2.8,the unit is Adc.When characteristic is drain current-pulsed,the symbol is IDM,the rating is 16.0,the unit is Adc.When characteristic is single pulsed avalanche energy,the symbol is EAS,the rating is 280,the unit is mJ.When characteristic is avalanche current,the symbol is IAS,the rating is 4.0,the unit is A.When characteristic is total power dissipation at Tc=25,the symbol is PD,the rating is 140,the unit is Watts.When characteristic is derate above Tc=25,the symbol is PD,the rating is 1.1,the unit is W/.When characteristic is operating and storage junction temperature range,the symbol is TJ,TSTG,the rating is -55 to +150,the unit is .When characteristic is maximum lead temp for soldering purposes,1/8 from case for 5 seconds,the symbol is TL,the rating is 300,the unit is .