Features: • 35A, 200V, R DS(on) = 0.065Ω @VGS = 10 V• Low gate charge ( typical 133 nC)• Low Crss ( typical 120 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter SSN1N45B SSS45N20B Units VDSS ...
SSP45N20B: Features: • 35A, 200V, R DS(on) = 0.065Ω @VGS = 10 V• Low gate charge ( typical 133 nC)• Low Crss ( typical 120 pF)• Fast switching• 100% avalanche tested• ...
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Symbol | Parameter | SSN1N45B | SSS45N20B | Units |
VDSS | Drain-Source Voltage | 200 | V | |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
35 | 35 * | A |
22.2 | 22.2 * | A | ||
IDM | Drain Current - Pulsed (Note 1) | 140 | 140 * | A |
VGSS | Gate-Source Voltage | ±30 | V | |
EAS | Single Pulsed Avalanche Energy(Note 2) | 650 | mJ | |
IAR | Avalanche Current (Note 1) | 35 | A | |
EAR | Repetitive Avalanche Energy (Note 1) | 17.6 | mJ | |
dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns | |
PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
176 | 57 | W |
1.41 | 0.45 | W/°C | ||
TJ, Tstg | Operating and Storage Temperature Range | -55 to +150 | °C | |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C |
These SSP45N20B N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well uited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.