Position: Home  > All Categories> Integrated Circuits (ICs) > SSP45N20B

SSP45N20B

Features: • 35A, 200V, R DS(on) = 0.065Ω @VGS = 10 V• Low gate charge ( typical 133 nC)• Low Crss ( typical 120 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter SSN1N45B SSS45N20B Units VDSS ...

product image

SSP45N20B Picture
See larger image
SeekIC No. : 004504019 Detail

SSP45N20B: Features: • 35A, 200V, R DS(on) = 0.065Ω @VGS = 10 V• Low gate charge ( typical 133 nC)• Low Crss ( typical 120 pF)• Fast switching• 100% avalanche tested• ...

SSP45N20B Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
SSP45N20B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 35A, 200V, R DS(on) = 0.065Ω @VGS = 10 V
• Low gate charge ( typical 133 nC)
• Low Crss ( typical 120 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter SSN1N45B SSS45N20B Units
VDSS Drain-Source Voltage 200 V
ID Drain Current - Continuous (TC = 25°C)
                      - Continuous (TC = 100°C)		 35 35 * A
22.2 22.2 * A
IDM Drain Current - Pulsed (Note 1) 140 140 * A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy(Note 2) 650 mJ
IAR Avalanche Current (Note 1) 35 A
EAR Repetitive Avalanche Energy (Note 1) 17.6 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TC = 25°C)
                        - Derate above 25°C		 176 57 W
1.41 0.45 W/°C
TJ, Tstg Operating and Storage Temperature Range -55 to +150 °C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 300 °C



Description

These SSP45N20B N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well uited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Filters
PICO2205A
PICO2204A
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Tools
TCP202
G084SN05 V.3
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Test Equipment
TOP853
TOP2005
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
View more