SSP4N60B

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 2.5 Ohms


Features:

• 4.0A, 600V, R _DS(on) = 2.5Ω @V_GS = 10 V
• Low gate charge ( typical 22 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• TO-220F package isolation = 4.0kV (Note 6)


Specifications

Symbol	Parameter	SSP4N60B	SSS4N60B	Units
VDSS	Drain-Source Voltage	600		V
ID	Drain Current - Continuous (TC = 25°C)                       - Continuous (TC = 100°C)	4.0	4.0*	A
		2.5	2.5*	A
IDM	Drain Current - Pulsed (Note 1)	16	16 *	A
VGSS	Gate-Source Voltage	±30		V
EAS	Single Pulsed Avalanche Energy(Note 2)	240		mJ
IAR	Avalanche Current (Note 1)	4.0		A
EAR	Repetitive Avalanche Energy (Note 1)	10		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5		V/ns
PD	Power Dissipation (TC = 25°C)                     - Derate above 25°C	100	33	W
		0.8	0.26	W/°C
TJ, Tstg	Operating and Storage Temperature Range	-55 to +150		°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300		°C

Description

These SSP4N60B N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.