SSP4N60AS

The SSP4N60AS is designed as advanced power MOSFET.

SSP4N60AS has many features. The first one is avalanche rugged technology. The second one is rugged gate oxide technology. The third one is lower input capacitance. The fourth one is improved gate charge. The fifth one is extended safe operating area. The sixth one is lower leakage current: 25uA max at Vds=600V. The seventh one is lower Rds(on) would be typ 2.037. That are all the main features.

Some absolute maximum ratings of SSP4N60AS have been concluded into several points as follow. The first one is about its drain to source voltage which would be 600V. The second one is about its continuous drain current which would be 4A at Tc=25°C and 2.5A at Tc=100°C. The third one is about its drain current pulsed which would be 16A. The fourth one is about its gate to source voltage which would be +/-30V. The fifth one is about its single pulsed avalanche energy which would be 262mJ. The sixth one is about its avalanche current which would be 4A. The seventh one is about its repetive avalanche energy which would be 10mJ. The eighth one is about its peak diode recovery dv/dt which would be 3.0V/ns. The ninth one is about its total power dissipation which would be 100W. The tenth one is about its operating junction and storage temperature range which would be from -55°C to +150°C. The eleventh one is about its maximum lead temperature for soldering purpose, 1/8'' from case for 5 seconds which would be 300°C. The twelfth one is about its thermal resistance which would be max 1.25°C/W for junction to case and would be typ 0.5°C/W for case to sink and would be max 62.5°C/W for junction to ambient. That are all the main ratings above. And so on. For more information please contact us.