MOSFET COOL MOS N-CH 650V 20.7A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 650 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 20.7 A | ||
Resistance Drain-Source RDS (on) : | 0.22 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247 | Packaging : | Tube |
· New revolutionary high voltage technology
· Ultra low gate charge
· Periodic avalanche rated
· Extreme dv/dt rated
· High peak current capability
· Intrinsic fast-recovery body diode
· Extreme low reverse recovery charge
Parameter |
Symbol |
Value |
Unit |
Continuous drain current TC = 25 °C TC = 100 °C |
ID |
20.7 13.1 |
A |
Pulsed drain current, tp limited by Tjmax |
ID puls |
52 | |
Avalanche energy, single pulse ID= 10A, VDD=50V |
EAS |
690 |
mJ |
Avalanche energy, repetitive tAR limited by Tjmax1) ID=20A, VDD=50V |
EAR |
1 | |
Avalanche current, repetitive tAR limited by Tjmax |
IAR |
20 |
A |
Reverse diode dv/dt IS=20.7A, VDS=480V, Tj=125°C |
dv/dt |
40 |
V/ns |
Gate source voltage static |
VGS |
±20 |
V |
Gate source voltage AC (f >1Hz) |
VGS |
±30 | |
Power dissipation TC = 25 °C |
Ptot |
208 |
W |
Operating and storage temperature |
Tj , Tstg |
-55... +150 |
°C |
Technical/Catalog Information | SPW20N60CFD |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25° C | 20.7A |
Rds On (Max) @ Id, Vgs | 220 mOhm @ 13.1A, 10V |
Input Capacitance (Ciss) @ Vds | 2400pF @ 25V |
Power - Max | 208W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 124nC @ 10V |
Package / Case | TO-247 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SPW20N60CFD SPW20N60CFD SPW20N60CFDIN ND SPW20N60CFDINND SPW20N60CFDIN |