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SPW20N60C2: MOSFET N-CH 600V 20A TO-247

SPW20N60C2 Data Sheet

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Part Number:: SPW20N60C2
Mfg:: Infineon Technologies
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/11/22

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Recent History
What is this?

SPW20N60C3 evaluate
US $1.49 - 2.86 / Piece

MOSFET COOL MOS N-CH 650V 20.7A
SPW20N60CFD evaluate
US $1.94 - 3.29 / Piece

MOSFET COOL MOS N-CH 650V 20.7A
SPW20N60S5 evaluate
US $1.81 - 2.02 / Piece

MOSFET COOL MOS N-CH 600V 20A

Product Details

Description

Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved noise immunity

Specifications

Parameter	Symbol	Value	Unit
Continuous drain current TC = 25 °C TC = 100 °C	I_D	20 13	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	40	A
Avalanche energy, single pulse I_D=10A, V_DD=50V	E_AS	690	mJ
Avalanche energy, repetitive t_AR limited by T_jmax1) I_D=20A, V_DD=50V	E_AR	1	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I^_AR	20	A
Reverse diode dv/dt I_S=20A, V_DS=480V, T_j=125°C	dv/dt	6	V/ns
Gate source voltage static	V_GS	±20	V
Power dissipation TC = 25 °C	P_tot	208	W
Operating and storage temperature	T_j, T_stg	-55... +150	°C

Parameters:

Technical/Catalog Information	SPW20N60C2
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	190 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds	3000pF @ 25V
Power - Max	208W
Packaging	Tube
Gate Charge (Qg) @ Vgs	103nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Request Inventory Verification
RoHS Status	Request Inventory Verification
Other Names	SPW20N60C2 SPW20N60C2 SPW20N60C2IN ND SPW20N60C2INND SPW20N60C2IN

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SPW20N60C2

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