Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Mounting Style
: Through Hole
Drain-Source Breakdown Voltage
: 650 V
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Resistance Drain-Source RDS (on)
: 0.19 Ohms
Package / Case
: TO-247
Continuous Drain Current
: 20.7 A
Features: • New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
Specifications
|
Parameter |
Symbol |
Value |
Unit |
Continuous drain current
TC = 25 °C
TC = 100 °C |
ID |
20.7
13.1 |
A |
| Pulsed drain current, tp limited by Tjmax |
ID puls |
62.1 |
Avalanche energy, single pulse
ID= 10A, VDD=50V |
EAS |
690 |
mJ |
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=20A, VDD=50V |
EAR |
1 |
| Avalanche current, repetitive tAR limited by Tjmax |
IAR |
20 |
A |
Reverse diode dv/dt
IS=20.7A, VDS=480V, Tj=125°C |
dv/dt |
6 |
V/ns |
| Gate source voltage static |
VGS |
±20 |
V |
| Gate source voltage AC (f >1Hz) |
VGS |
±30 |
Power dissipation
TC = 25 °C |
Ptot |
208 |
W |
| Operating and storage temperature |
Tj , Tstg |
-55... +150 |
°C |
DescriptionThe SPW20N60C3 is a high efficiency step-down PWM current mode switching regulator capable of providing up to 3 A of output current. The features of SPW20N60C3 are: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)High peak current capability; (6)Improved transconductance.
The following is about the absolute maximum ratings of SPW20N60C3: (1)Positive power supply voltage: -0.3 to 20 V; (2)Positive supply voltage: -0.3 to 20 V; (3)Inhibit voltage: -0.3 to VIN_A V; (4)Output switch voltage: -0.3 to 20 V; (5)Feedback voltage: -0.3 to 2.5 V; (6)FB current: -1 to +1 mA; (7)Synchronization: -0.3 to 6 V; (8)Storage temperature range: -40 to 150 °C; (9)Operating junction temperature range: -25 to 125 °C.
The electrical characteristics of the SPW20N60C3 are: (1)Continuous drain current: 20.7A at TC = 25 °C and 13.1A at TC = 100 °C; (2)Pulsed drain current, tp limited by Tjmax: 62.1A; (3)Avalanche energy, single pulse ID = 10 A, VDD = 50 V: 690 mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax1 ID = 20 A, VDD = 50 V: 1mJ; (5)Avalanche current, repetitive tAR limited by Tjmax: 20 A; (6)Reverse diode dv/dt IS=20.7A, VDS=480V, Tj=125°C: 6 V/ns; (7)Gate source voltage static: ±20 V; (8)Gate source voltage AC (f >1Hz): ±30V; (9)Power dissipation, TC = 25°C: 208 W; (10)Operating and storage temperature: -55 to +150 °C.
Parameters: | Technical/Catalog Information | SPW20N60C3 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 20.7A |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 13.1A, 10V |
| Input Capacitance (Ciss) @ Vds | 2400pF @ 25V |
| Power - Max | 208W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 114nC @ 10V |
| Package / Case | TO-247 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPW20N60C3
SPW20N60C3
SPW20N60C3IN ND
SPW20N60C3INND
SPW20N60C3IN
|
SPW20N60C3 Data Sheet
