Position: Home  > All Categories> Integrated Circuits (ICs) > SPP20N60S5

SPP20N60S5

MOSFET COOL MOS N-CH 600V 20A

product image

SPP20N60S5 Picture
See larger image
SeekIC No. : 00151374 Detail

SPP20N60S5: MOSFET COOL MOS N-CH 600V 20A

SPP20N60S5 Data Sheet

floor Price/Ceiling Price

US $ 1.42~1.53 / Piece | Get Latest Price
Part Number:
SPP20N60S5
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $1.53
  • $1.48
  • $1.45
  • $1.42
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/4

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.19 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 20 A
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 0.19 Ohms


Features:

• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance




Specifications

Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 20
13		 A
Pulsed drain current, tp limited by Tjmax ID puls 40
Avalanche energy, single pulse
ID=10A, VDD=50V		 EAS 690 mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=20A, VDD=50V		 EAR 1
Avalanche current, repetitive tAR limited by Tjmax IAR 20 A
Gate source voltage VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, TC = 25°C Ptot 208 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Drain Source voltage slope
VDS = 480 V, ID = 20 A, Tj = 125 °C		 dv/dt 20 V/ns

1 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.




Parameters:

Technical/Catalog InformationSPP20N60S5
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs190 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds 3000pF @ 25V
Power - Max208W
PackagingTube
Gate Charge (Qg) @ Vgs103nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPP20N60S5
SPP20N60S5
SPP20N60S5IN ND
SPP20N60S5INND
SPP20N60S5IN



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Optical Inspection Equipment
AA924
A21K4B
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Cables, Wires
821-0814-a
415-0100-150
View more