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SPP20N60CFD

MOSFET COOL MOS N-CH 650V 20.7A

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SeekIC No. : 00146011 Detail

SPP20N60CFD: MOSFET COOL MOS N-CH 650V 20.7A

SPP20N60CFD Data Sheet

floor Price/Ceiling Price

US $ 1.73~2.93 / Piece | Get Latest Price
Part Number:
SPP20N60CFD
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $2.93
  • $2.35
  • $2.14
  • $1.73
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 650 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 20.7 A
Resistance Drain-Source RDS (on) : 0.22 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Resistance Drain-Source RDS (on) : 0.22 Ohms
Continuous Drain Current : 20.7 A


Features:

· New revolutionary high voltage technology
· Worldwide best RDS(on) in TO 220
· Ultra low gate charge
· Periodic avalanche rated
· Extreme dv/dt rated
· High peak current capability
· Intrinsic fast-recovery body diode
· Extreme low reverse recovery charge




Specifications

Parameter
Symbol
Value
Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
20.7
13.1
A
Pulsed drain current, tp limited by Tjmax
ID puls
52
Avalanche energy, single pulse
ID = 10 A, VDD = 50 V
EAS
690
mJ
Avalanche energy, repetitive  tAR limited by Tjmax1) 
ID=20 A, VDD=50 V
EAR
1
Avalanche current, repetitive tAR limited by Tjmax
IAR
20
A
Reverse diode dv/dt
IS=20.7A, VDS=480V, Tj=125°C
dv/dt
40
V/ns
Gate source voltage
VGS
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation, TC = 25°C
Ptot
208
W
 Operating and storage temperature

 Tj , Tstg

 -55... +150

 °C




Parameters:

Technical/Catalog InformationSPP20N60CFD
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C20.7A
Rds On (Max) @ Id, Vgs220 mOhm @ 13.1A, 10V
Input Capacitance (Ciss) @ Vds 2400pF @ 25V
Power - Max208W
PackagingTube
Gate Charge (Qg) @ Vgs124nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPP20N60CFD
SPP20N60CFD
SPP20N60CFDIN ND
SPP20N60CFDINND
SPP20N60CFDIN



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