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SPP20N60C2

MOSFET N-CH 650V 20A TO-220AB

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SeekIC No. : 004501299 Detail

SPP20N60C2: MOSFET N-CH 650V 20A TO-220AB

SPP20N60C2 Data Sheet

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Part Number:
SPP20N60C2
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances


Specifications

Parameter Symbol Value Unit
SPP_B SPA
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 20
13		 201)
131)		 A
Pulsed drain current, tp limited by Tjmax ID puls 40 40 A
Avalanche energy, single pulse
ID=10A, VDD=50V		 EAS 690 690 mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=20A, VDD=50V		 EAR 1 1
Avalanche current, repetitive tAR limited by Tjmax IAR 20 20 A
Reverse diode dv/dt
IS = 20 A, VDS < VDD, di/dt=100A/s, Tjmax=150°C		 dv/dt 6 6 V/ns
Gate source voltage VGS ±20 ±20 V
Gate source voltage AC (f >1Hz) VGS ±30 ±30  
Power dissipation, TC = 25°C Ptot 208 34.5 W
Operating and storage temperature Tj , Tstg -55...+150 °C



Parameters:

Technical/Catalog InformationSPP20N60C2
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs190 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds 3000pF @ 25V
Power - Max208W
PackagingTube
Gate Charge (Qg) @ Vgs103nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusRequest Inventory Verification
RoHS StatusRequest Inventory Verification
Other Names SPP20N60C2
SPP20N60C2
SPP20N60C2IN ND
SPP20N60C2INND
SPP20N60C2IN



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