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SPB20N60S5

MOSFET COOL MOS N-CH 600V 20A

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SeekIC No. : 00151411 Detail

SPB20N60S5: MOSFET COOL MOS N-CH 600V 20A

SPB20N60S5 Data Sheet

floor Price/Ceiling Price

US $ 1.46~2.56 / Piece | Get Latest Price
Part Number:
SPB20N60S5
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • Unit Price
  • $2.56
  • $2.3
  • $1.87
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  • $1.46
  • Processing time
  • 15 Days
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Upload time: 2024/11/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.19 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 20 A
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 0.19 Ohms


Features:

• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance




Specifications

Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 20
13		 A
Pulsed drain current, tp limited by Tjmax ID puls 40
Avalanche energy, single pulse
ID=10A, VDD=50V		 EAS 690 mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=20A, VDD=50V		 EAR 1
Avalanche current, repetitive tAR limited by Tjmax IAR 20 A
Gate source voltage VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, TC = 25°C Ptot 208 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Drain Source voltage slope
VDS = 480 V, ID = 20 A, Tj = 125 °C		 dv/dt 20 V/ns

1 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.




Parameters:

Technical/Catalog InformationSPB20N60S5
VendorInfineon Technologies (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs190 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds 3000pF @ 25V
Power - Max208W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs103nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPB20N60S5
SPB20N60S5
SPB20N60S5INDKR ND
SPB20N60S5INDKRND
SPB20N60S5INDKR



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